1. S. Shirasawa and K. Sueoka, “Effective gettering sites for metal impurities in Si wafers searched by first principles calculation” The Forum on the Science and Technology of Silicon Materials 2014 in Hamamatsu, (2014) pp.135-139.
2. D. Shibata, S. Kobayashi and K. Sueoka, “Ab initio analysis on stability
of metal atoms in β-Si3N4/Si structure” The Forum on the Science and Technology
of Silicon Materials 2014 in Hamamatsu, (2014) pp.140-148.
3. R. Matsutani, K. Sueoka and E. Kamiyama, “First principles analysis of
stomic configurations of group IV elements in Ge crystal for solar cells”
The Forum on the Science and Technology of Silicon Materials 2014 in Hamamatsu,
(2014) pp.186-193.
4. R. Suwa, K. Sueoka and E. Kamiyama, “Basic Study on Energy Band Structures of Group IV Compound Semiconductors for Solar Cells” The Forum on the Science and Technology of Silicon Materials 2014 in Hamamatsu, (2014) pp.194-201.
5. **J. Vanhellemont, E. Kamiyama, K. Nakamura and K. Sueoka “Control of
Intrinsic Point Defects in Single Crystal Silicon and Germanium Growth
from a Melt”, The Forum on the Science and Technology of Silicon Materials
2014 in Hamamatsu, (2014) pp.223-236. (invited)
6. D. Shibata, S. Kobayashi, K. Sueoka, J. Komachi and K. Saga, “Ab initio
analysis on stability of metal atoms in β-Si3N4/Si structure”, 13th International
Symposium on High Purity and High Mobility Semiconductors in Cancun, ECS
Transactions, 64, (2014) pp.229-237.
7. **K. Sueoka, E. Kamiyama, J. Vanhellemont and K. Nakamura, “Stress and
Doping Impact on Intrinsic Point Defect Behavior in Growing Single Crystal”
13th International Symposium on High Purity and High Mobility Semiconductors
in Cancun, (invited)
8. R. Matsutani, K. Sueoka and E. Kamiyama, “First principles analysis of
atomic configurations of group IV elements in Ge crystal for solar cells”,
presented in The European Materials and Research Society Spring Meeting
in Lille, (2014).
9. R. Suwa, K. Sueoka and E. Kamiyama, “Basic Study on Energy Band Structures of Group IV Compound Semiconductors for Solar Cells”, presented in The European Materials and Research Society Spring Meeting in Lille, (2014).
10. E. Kamiyama, K. Sueoka and J. Vanhellemont, “Dynamics of two vacanies in
a cage of silicon to build an atomistic picture in forming a di-vacancy”,
presented in The European Materials and Research Society Spring Meeting
in Lille, (2014).
11. K. Sueoka, E. Kamiyama, J. Vanhellemont and K. Nakamura, “Stress and Doping
Impact on Intrinsic Point Defect Behaviour in Growing Single Crystal Silicon”, Physica Status Solidi, presented in The European Materials and Research Society Spring Meeting
in Lille, (2014). (invited)
12. T. Yamato, K. Sueoka and T. Maeta,” First-principles analysis on interaction
between dopant (Ga, Sb) and contamination metal atoms in Ge crystals”,
15th International Meeting of Gettering and Defect Engineering in Semiconductors
in Oxford, Solid State Phenomena, 205-206, (2013) pp.417-421.
13.K. Sueoka, E. Kamiyama and J. Vanhellemont,” Theoretical study of the impact
of stress on the behavior of intrinsic point defects in large-diameter
defect-free Si crystals”, 15th International Meeting of Gettering and Defect
Engineering in Semiconductors in Oxford, Solid State Phenomena, 205-206, (2013) pp.163-168.
14. E. Kamiyama, K. Sueoka, O. Nakatsuka, N. Taoka, S. Zaima, K. Izunome and
K. Kashima, “Incorporation of a Vacancy with an Sn Atom in Epitaxial Ge1-xSnx
Film Growth at Lower Temperature”, ICSI-8 in Fukuoka, AS2-3, (2013) pp.
61 – 62.
15. J. Vanhellemont, E. Kamiyama and K. Sueoka, “On the Role of Thermal Gradient Related Stress and Impurities in Intrinsic Defect Formation during Single Crystal Silicon Growth from the Melt”, 6th International Symposium on Advanced Science and Technology of Silicon Materials in Kona, Hawaii, (2012) pp.19-22.
16. E. Kamiyama, K. Sueoka and J. Vanhellemont, “Ab Initio Analysis of a Vacancy
and a Self-Interstitial near Single Crystal Silicon Surfaces – Implications
for Intrinsic Point Defect Incorporation during Crystal Growth from a Melt”,
6th International Symposium on Advanced Science and Technology of Silicon
Materials in Kona, Hawaii, (2012) pp.59-62.
17. T. Iwasaki and K. Sueoka, “First-Principle Calculation on Interaction
of Dopant-Point Defect Complex and Metal Atom in Si Crystal”, 6th International
Symposium on Advanced Science and Technology of Silicon Materials in Kona,
Hawaii, (2012) pp.238-241.
18. **K. Sueoka, E. Kamiyama, H. Kariyazaki and J. Vanhellemont, “A Density
Functional Theory of the Effect of Pressure on the Formation and Migration
Enthalpies of Intrinsic Point Defects in Growing Si Single Crystals”, 12th
International Symposium on High Purity Silicon in Honolulu, ECS Transactions, 50, (2012) pp.43-52. (invited)
19. **J. Vanhellemont, E. Kamiyama and K. Sueoka, “Si Crystal Growth from
a Melt: The Secrets behind the v/G Criterion”, 12th International Symposium
on High Purity Silicon in Honolulu, ECS Transactions, 50, (2012) pp.23-41. (invited)
20. E. Kamiyama and K. Sueoka, ”Long-Range Interaction between H and (B, P,
As, Sb) Dopant Atoms in Silicon Crystals Investigated by First Principles
Calculation”, 12th International Symposium on High Purity Silicon in Honolulu,
ECS Transactions, 50, (2012) pp.105-114.
21. K. Sueoka, E. Kamiyama and H. Kariyazaki, “A study on density functional theory of the effect of pressure on the formation and migration enthalpies of intrinsic point defects in growing single crystal Si”, 31th International Conference on Modeling and Simulation Technology (JSST2012) in Kobe, (2012).
22. S. Ota and K. Sueoka, “Molecular Dynamics Calculation on Formation of Void Defects in Si and Ge Crystals”, 31th International Conference on Modeling and Simulation Technology (JSST2012) in Kobe, (2012).
23. S. Kobayashi, T. Yamato, H. Kariyazaki and K. Sueoka, “First-Principles Analysis on Stability of Interstitial H Atom in Si and Ge crystals”, 31th International Conference on Modeling and Simulation Technology (JSST2012) in Kobe, (2012).
24. T. Yamato, S. Kobayashi and K. Sueoka, “First-Principles Analysis on Stability of Interstitial O Atom in Si and Ge Crystals”, 31th International Conference on Modeling and Simulation Technology (JSST2012) in Kobe, (2012).
25. T. Hosokawa and K. Sueoka, “First Principles Analysis on Mechanical Properties of SiO2 and GeO2”, 31th International Conference on Modeling and Simulation Technology (JSST2012) in Kobe, (2012).
26. E. Kamiyama, K. Sueoka and J. Vanhellemont, “Ab Initio Analysis of a Vacancy and a Self-Interstitial near Single Crystal Silicon Surfaces - Implications for Intrinsic Point Defect Incorporation during Crystal Growth from a Melt –”, presented in The European Materials and Research Society Spring Meeting in Strasbourg, (2012).
27. H. Kariyazaki and K. Sueoka, “Density functional study on the formation energy of vacancy in Si, Ge, and Si1-xGex”, presented in The European Materials and Research Society Spring Meeting in Strasbourg, (2012).
28. K. Sueoka, E. Kamiyama, H. Kariyazaki and J. Vanhellemont, “A study on density functional theory of the effect of pressure on the formation and migration enthalpies of intrinsic point defects in growing single crystal Si”, presented in The European Materials and Research Society Spring Meeting in Strasbourg, (2012).
29. T. Maeta and K. Sueoka, “First-principles Calculation for Behavior of Metal Impurities in Ge(100)/Si(100)”, 30th International Conference on Modeling and Simulation Technology (JSST2011) in Tokyo, (2011).
30. T. Iwasaki, K. Saga, J. Komachi and K. Sueoka, “First-principles Study on As-Vacancy Complexes in Si Crystal”, 30th International Conference on Modeling and Simulation Technology (JSST2011) in Tokyo, (2011).
31. E. Kamiyama and K. Sueoka, “First Principles Analysis on Internal Atoms and Vacancies Near Si(100) Surface with Dimmers”, 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors in Miyazaki, (2011).
32. T. Maeta and K. Sueoka, “First-principles Calculation for Behavior of Metal Impurities in Ge(100)/Si(100)”, 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors in Miyazaki, (2011).
33. E. Kamiyama and K. Sueoka, “Impact of the Formation of Dimer Structures
at the Surface on the Internal Atoms of Si Thin Film”, 2011 MRS Spring
Meeting, Symposium YY: Computational Semiconductor Materials Science, (2011).
34. H. Kariyazaki, T. Aoki, K. Izunome and K. Sueoka, “First-principles Calculation
on Interface of Si(110)/(100) Substrate”, 2011 MRS Spring Meeting, Symposium
YY: Computational Semiconductor Materials Science, (2011).
35. T. Shimizu, Y. Shigematsu and K. Sueoka, “Diffusion Mechanism of 3d Transition
Metals at Si (100) Surface Studied by First Principles Calculation”, The
Forum on the Science and Technology of Silicon Materials 2010 in Okayama,
(2010) pp.296-303.
36. T. Nanba and K. Sueoka, “First Principles Analysis on Diffusion Mechanism
of Contamination Atoms in SiO2 Crystal”, The Forum on the Science and Technology
of Silicon Materials 2010 in Okayama, (2010) pp.313-320.
37. T. Aoki, K. Araki, T. Senda, H. Nagahama, K. Izunome and K. Sueoka,“Numerical Simulation of Slip Generation during the Annealing of Large-diameter Silicon Wafers”, The Forum on the Science and Technology of Silicon Materials 2010 in Okayama, (2010) pp.367-369.
38. Y. Shigematsu and K. Sueoka, “Diffusion Mechanism of Metal Impurities
in Strained Si Crystals Analyzed by First Principles Calculation”, The
Forum on the Science and Technology of Silicon Materials 2010 in Okayama,
(2010) pp.376-382.
39. H. Kariyazaki, T. Aoki, K. Izunome and K. Sueoka, “Molecular Simulation
on Interfacial Structure of Direct Silicon Bonded (110)/(100) Substrates”,
The Forum on the Science and Technology of Silicon Materials 2010 in Okayama,
(2010) pp.463-470.
40. T. Nagasawa, S. Shiba and K. Sueoka, “First-Principles Study on Initial Stage of Oxidation on Si (110) Surface”, presented in The European Materials and Research Society Spring Meeting in Strasbourg, (2010).
41. . H. Kariyazaki, T. Aoki, K. Izunome and K. Sueoka, “First-Principles Calculation
on Screw Defects at Si(110)/(100) Interface”, presented in The European
Materials and Research Society Spring Meeting in Strasbourg, (2010).
42. T. Aoki, H. Kariyazaki, K. Sueoka and K. Izunome, “Gettering Efficiency
of Si(110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates”,
13th International Meeting of Gettering and Defect Engineering in Semiconductors
in Schorfheide, Solid State Phenomena, 156-158, (2009) pp.369-374.
43. H. Kariyazaki, T. Aoki, K. Sueoka and K. Izunome, “Molecular Simulation on Interfacial Structure and Gettering Efficiency of Si(110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates”, 13th International Meeting of Gettering and Defect Engineering in Semiconductors in Schorfheide, Solid State Phenomena, 156-158, (2009) pp.199-204.
44. K. Sueoka, K. Kamimura and S. Shiba, “First Principles Calculation on
Gettering Mechanism of Transition Metals in Si Crystals”, 5th International
Symposium on Advanced Science and Technology of Silicon Materials in Kona,
Hawaii, (2008) pp.103-107.
45. H. Kariyazaki, T. Aoki, S. Shiba, K. Izunome and K. Sueoka, “Molecular
Simulation on Hybrid Orientation Substrates for the Next Generation of
LSI”, 5th International Symposium on Advanced Science and Technology of
Silicon Materials in Kona, Hawaii, (2008) pp.108-112.
46. T. Nagasawa, S. Shiba and K. Sueoka, “First Principles Calculation on Initial Stage of Oxidation of Si (110) Surface”, 5th International Symposium on Advanced Science and Technology of Silicon Materials in Kona, Hawaii, (2008) pp.113-117.
47. T. Aoki, H. Kariyazaki, K. Sueoka, E. Toyoda and K. Izunome, “Gettering
Efficiency of Si(110)/(100) Directly Bonded Hybrid Crystal Orientation
Substrates”, 5th International Symposium on Advanced Science and Technology
of Silicon Materials in Kona, Hawaii, (2008) pp.295-298.
48. E. Kamiyama and K. Sueoka, “Surface Electrical Conduction Measurement
of Si(100) Film of Silicon-on-Insulator Wafers”, The Forum on the Science
and Technology of Silicon Materials 2007 in Niigata, (2007) pp.324-329.
49. K. Sueoka, T. Kabasawa and S.Shiba, “TEM Observation of the Dislocations Nucleated from Cracks inside Lightly or Heavily Doped Czochralski Silicon Wafers”, The Forum on the Science and Technology of Silicon Materials 2007 in Niigata, (2007) pp.52-61.
50. **K. Sueoka, P. Śpiewak and J.Vanhellemont, “Ab Initio Analysis of Point
Defects in Plane-Stressed Si or Ge Crystals”, 7th International Symposium
on Analytical and Diagnostic Techniques for Semiconductor Materials, Devices,
and Processes in Washington, The Electrochem. Soc. Proceedings, 11, (2007)
pp.375-391. (invited)
51. **K. Sueoka, “Oxygen Precipitation in Lightly and Heavily Doped Czochralski
Silicon”, 9th International Symposium on High Purity Silicon in Cancun,
The Electrochem. Soc. Proceedings, 3, (2006) pp.71-87. (invited)
52. K. Sueoka and J. Vanhellemont, “Ab Initio Studies of Intrinsic Point Defects, Interstitial Oxygen and Vacancy or Oxygen Clustering in Ge Crystals”, presented in The European Materials and Research Society Spring Meeting in Nice, (2006).
53. K. Sueoka, S. Ohara, S. Shiba and S. Fukutani, “First Principles Calculation
for Cu Gettering by Dopant or Dopant-Vacancy Complex in Silicon Crystal”,
10th International Symposium on Silicon Materials Science and Technology
in Denver, The Electrochem. Soc. Proceedings, 2, (2006) pp.261-273.
54. W. Sugimura, T. Ono, M. Hourai and K. Sueoka, “Defect Formation Behaviors
in Heavily Doped Czochralski Silicon”, 10th International Symposium on
Silicon Materials Science and Technology in Denver, The Electrochem. Soc.
Proceedings, 2, (2006) pp.95-107.
55. **K. Sueoka, S. Shiba and S. Fukutani, “First Principles Calculation for
Point Defect Behavior, Oxygen Precipitation and Cu Gettering in CZ Silicon”,
11th International Meeting of Gettering and Defect Engineering in Semiconductors
in Giens, Solid State Phenomena, 108-109, (2005) pp.365-372. (invited)
56. K. Sueoka, S. Shiba and S. Fukutani, “First Principles Calculation for
Interaction between Point Defects and Dopants in Czochralski Silicon”,
4th International Symposium on Advanced Science and Technology of Silicon
Materials in Kona, Hawaii, (2004) pp.75-80.
57. K. Sueoka, K. Mori, S. Shiba and S. Fukutani, “Analysis on the Oxygen
Precipitation Behavior in Heavily B Doped p/p+ CZ-Si Epitaxial Wafers by
Ab Initio Calculations”, 4th International Symposium on Advanced Science
and Technology of Silicon Materials in Kona, Hawaii, (2004) pp.69-74.
58. K. Sueoka, “Modeling of Internal Gettering for Metal Impurities by Oxide Precipitates in CZ-Si Wafers”, 8th International Symposium on High Purity Silicon in Honolulu, The Electrochem. Soc. Proceedings, 2004-05, (2004) pp.176-187.
59. K. Sueoka, “Modeling of Internal Gettering for Ni and Cu Contamination
by Oxide Precipitates in CZ-Si Wafers”, The Forum on the Science and Technology
of Silicon Materials in Shonan, (2004) pp.79-89.
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