1. T. Maeta and K. Sueoka, “Density functional theory calculations of stability
and diffusion mechanisms of impurity atoms in Ge crystals”, J. Appl. Phys., 116 (2014) 073505 (9 pages).
2. R. Matsutani, K. Sueoka and E. Kamiyama, “First principles analysis of
atomic configurations of group IV elements in Ge crystal for solar cells”,
Physica Status Solidi, 09/2014; DOI: 10.1002/pssc.201400029.
3. R. Suwa, K. Sueoka and E. Kamiyama, “Basic Study on Energy Band Structures
of Group IV Compound Semiconductors for Solar Cells”, Physica Status Solidi, 10/2014; DOI: 10.1002/pssb.201400030.
4. E. Kamiyama, K. Sueoka and J. Vanhellemont, “Dynamics of two vacanies in a cage of silicon to build an atomistic picture in forming a di-vacancy”, Physica Status Solidi, 09/2014; DOI: 10.1002/pssb.201400025.
5. K. Sueoka, E. Kamiyama, J. Vanhellemont and K. Nakamura, “Stress and Doping
Impact on Intrinsic Point Defect Behaviour in Growing Single Crystal Silicon”,
Physica Status Solidi, 09/2014; DOI: 10.1002/pssb.201400022.
6. K. Sueoka, E. Kamiyama, J. Vanhellemont and K. Nakamura, “Impact of Plane Thermal Stress near the Melt/Solid Interface on the v/G Criterion for Defect-Free Large Diameter Single Crystal Si Growth”, ECS J. Solid State Sci., 3 (2014) pp.P69-P72.
7. J. Vanhellemont, E. Kamiyama and K. Sueoka, “Comment on “Experimental Study
of the Impact of Stress on the Point Defect Incorporation during Silicon
Growth” [ECS Solid State Lett., 3, N5 (2014)]”, ECS J. Solid State Sci., 3 (2014) pp.X3-X4.
8. E. Kamiyama, K. Sueoka and J. Vanhellemont, “Formation energy of intrinsic
point defects in nanometer-thick Si and Ge foils and implications for Ge
crystal growth from a melt” Physica Status Solidi (c), 11 (2014) pp.85-88.
9. E. Kamiyama, K. Sueoka, O. Nakatsuka, N. Taoka, S. Zaima, K. Izunome
and K. Kashima, “Analysis for positions of Sn atoms in epitaxial Ge1−xSnx
film in low temperature depositions”, Thin Solid Film., 557 (2014) pp.173-176.
10. K. Sueoka. E. Kamiyama and J. Vanhellemont,” Density functional theory
study on the impact of heavy doping on Si intrinsic point defect properties
and implications for single crystal growth from a melt”, J. Appl. Phys., 114, (2013) 153510 (19 pages)
11. E. Kamiyama, K. Sueoka, K. Izunome, K. Kashima, O. Nakatsuka, N. Taoka,
S. Zaima and J. Vanhellemont, “Doppler Broadening Spectroscopy of Positron
Annihilation near Ge and Si (001) Single Crystal Surfaces”, ECS J. Solid State Sci., 2 (2013) pp.89-90.
12. E. Kamiyama, J. Vanhellemont, K. Sueoka, K. Araki and K. Izunome, "Thermal
stress induced void formation during 450mm defect free silicon crystal
growth and implications for wafer inspection, Appl. Phys. Lett., 102 (2013) 082108 (4pages).
13. M. Sogawa, K. Takarabe, Y. Mori, T. Okada, T. Yagi, H. Kariyazaki and K.
Sueoka, "Bulk modulus and structural changes of carbon nitride C2N2
(CH2) under pressure: The strength of C-N single bond”, J. Appl. Phys., 113, (2012) 053510(5 pages).
14. J. Vanhellemont, E. Kamiyama and K. Sueoka, “Silicon single crystal growth from a melt: On the impact of dopants on the v/G criterion”, ECS J. Solid State Sci., 2 (2013) pp.166-179.
15. E. Kamiyama, K. Sueoka and J. Vanhellemont, “Surface-induced charge at
a Ge (100) dimer surface and its interaction with vacancies and self-interstitials"
J. Appl. Phys., 113, (2013) 093503(5 pages).
16. K. Sueoka, E. Kamiyama and H. J. Vanhellemont, " Theoretical study
of the impact of stress on the behavior of intrinsic point defects in large-diameter
defect-free Si crystals", J. Crustal Growth, 363, (2013) pp.97-104.
17. 岩崎剛士，末岡浩治，“Si結晶中のドーパント-点欠陥複合体と金属原子の相互作用に関する第一原理計算”, 日本機械学会論文集（A編）, 79巻, (2013) pp.327-335.
18. E. Kamiyama and K. Sueoka, " Struggle between inner atoms of ultra-thin
silicon film and both its dimer surfaces", Results in Physics, 2, (2012) pp.185-189.
19. K. Takarabe, M. Sougawa, H. Kariyazaki and K. Sueoka “ Electronic Structure of C2N2X (X=O, NH, CH2): Wide Band Gap Semiconductors”, J. Appl. Phys., 112, (2012) 013537(6 pages).
20. E. Kamiyama, K. Sueoka and J. Vanhellemont, “Ab Initio Analysis of a Vacancy and a Self-Interstitial near Single Crystal Silicon Surfaces - Implications for Intrinsic Point Defect Incorporation during Crystal Growth from a Melt -” Physica Status Solidi (a), (2012) DOI: 10.1002/pssa.201200066.
21. K. Sueoka, E. Kamiyama, H. Kariyazaki and J. Vanhellemont, “DFT study of the effect of hydrostatic pressure on formation and migration enthalpies of intrinsic point defects in single crystal Si” Physica Status Solidi (c), (2012) DOI: 10.1002/pssc.201200071.
22. K. Sueoka, E. Kamiyama and H. Kariyazaki, " A study on density functional theory of the effect of pressure on the formation and migration enthalpies of intrinsic point defects in growing single crystal Si”, J. Appl. Phys., 111, (2012) 093529 (10 pages).
23. E. Kamiyama and K. Sueoka, "Ab Initio Study of Vacancy and Self-Interstitial
Properties near Single Crystal Silicon Surfaces”, J. Appl. Phys., 111, (2012) 083507 (9 pages).
24. E. Kamiyama and K. Sueoka, "Effect of Dangling Bonds of Ultra-Thin
Silicon Film Surface on Electronic States of Internal Atoms”, Appl. Surf. Sci., 258, (2012) pp.5265-5269.
25. E. Kamiyama and K. Sueoka, "Long-range Interactions between H and Dopant Atoms in Silicon Crystals by First Principles Calculation", J. Electrochem. Soc., 159, (2012) pp.H450-H454.
26. E. Kamiyama and K. Sueoka, “First Principles Analysis on Interaction between Vacancy near Surface and Dimer Structure of Silicon Crystal”, J. Appl. Phys., 111, (2012) 013521 (5 pages).
27. T. Nagasawa and K. Sueoka, “”Simulation of STM Images on a Flat Si (110)-(8×2)
Surface Using Density Functional Theory”, J. Electrochem. Soc., 159, (2012)
pp.H201-207.
28. M. Sougawa, T. Sumiya, K. Takarabe, Y. Mori, T. Okada, H. Gotou, T. Yagi,
D. Yamazaki, N. Tomioka, T. Katsura, H. Kariyazaki, K. Sueoka, and S. Kunitsugu,
“Crystal Structure of New Carbon–Nitride-Related Material C2N2(CH2)”, Jpn. J. Appl. Phys., 50, (2011) pp.095503 (5 pages).
29. 西元学, 末岡浩治, 本岡輝昭, “シリコン単結晶におけるボイド欠陥の界面エネルギーの第一原理計算”, 日本金属学会誌, 75巻, (2011)
pp.640-644.
30. T. Nagasawa and K. Sueoka, “First principles calculation on initial stage
of oxidation of Si (110)-(1×1) surface”, Advances in Condensed Matter Physics, 2011, (2011) Article ID 216065, 5 pages.
31. S. Shiba and K. Sueoka, “TEM observation of the dislocations nucleated
from cracks inside lightly or heavily doped Czochralski silicon wafers",
Advances in Condensed Matter Physics, 2011, (2011) Article ID 541318, 6 pages.
32. T. Nagasawa, S. Shiba and K. Sueoka, “First-Principles Study on Initial
Stage of Oxidation on Si (110) Surface”, Physica Status Solidi C, 8, (2011) pp.717-720.
33. H. Kariyazaki, T. Aoki, K. Izunome and K. Sueoka, “First-Principles Calculation on Screw Defects at Si(110)/(100) Interface”, Physica Status Solidi C, 8, (2011) pp.690-693.
34. 中西亮太, 國次真輔, 末岡浩治, “NaCl型窒化物の表面エネルギーに関する第一原理計算”, 表面技術, 61巻, (2010) pp.535-540.
35. H. Kariyazaki, T. Aoki, K. Izunome and K. Sueoka, “Molecular Simulation on Interfacial Structure and Gettering Efficiency of Direct Silicon Bonded (110)/(100) Interface”, J. Appl. Phys., 107, (2010) pp.113509 (6 pages).
36. E. Kamiyama and K. Sueoka, “Impact of the Formation of Dimer Structutes
at the Surface on the Internal Atoms of Si Thin Film”, J. Electrochem. Soc., 157, (2010) pp.H323-327.
37. K. Sueoka, K. Kamimura and S. Shiba, “Systematic Investigation of Gettering Effects on 4th Row Element Impurities in Si by Dopant Atoms”, Advances in Materials Science and Engineering, 2009, (2009) Article ID 309209, 3 pages.
38. T. Aoki, H. Kariyazaki, K. Sueoka, E. Toyoda and K. Izunome, “Gettering Efficiency of Si(110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates”, Jpn. J. Appl. Phys., 49, (2010) pp.035501 (6 pages).
39. J. Vanhellemont, P. Śpiewak, K. Sueoka and I. Romandic, “On Intrinsic
Point Defect Cluster Formation during Czochralski Crystal Growth”, Phys. Status Solidi C, 6, (2009) pp.1906-1911.
40. R. Nakanishi, K. Sueoka, S. Shiba, M. Hino, K. Murakami and K. Muraoka,
“First Principles Calculation of the Stable Structure and Adhesive Strength
of Plated Ni/Fe(100) or Cu/Fe(100) Interfaces”, Transactions of Nonferrous Metals Society of China, 19, (2009) pp.988-991.
41. E. Kamiyama and K. Sueoka, “Surface Inspection of Silicon-on-Insulator Wafers with Ultrathin Top-Si Layer by Laser Scattering. -Numerical Analysis of Light Scattering by Voids-”, Jpn. J. Appl. Phys., 48, (2009) pp.011206-1-011206-5.
42. K. Sueoka, Y. Wang, S. Shiba and S. Fukutani, “Ab Initio Analysis of
Point Defects in Plane-Stressed Si Single Crystal”, J. Computational Science and Technology, 2, (2008) pp.478-487.
43. P. Śpiewak, J. Vanhellemont, K. Sueoka, K.J. Kurzydłowski and I. Romandic,
“Ab-initio Simulation of Self-interstitial in Germanium”, Materials Science in Semiconductor Processing, 11, (2008) pp.328-331.
44. 高梨敬一, 末岡浩治, 福谷征史郎, “チョクラルスキー法を用いたSi単結晶育成炉におけるフュージョンリング画像を用いた液面位置測定技術の開発”,
日本機械学会論文集（C編）, 74巻, (2008) pp.1562-1568.
45. P. Śpiewak, J. Vanhellemont, K. Sueoka, K.J. Kurzydłowski and I.Romandic,
“First Principles Calculations of the Formation Energy and Deep Levels
Associated with the Neutral and Charged Vacancy in Germanium”, J. Appl. Phys., 103, (2008) pp.086103-1-086103-3.
46. S. Kishino, K. Sueoka and H.Yoshida, “First Principles Calculation of Energy Band Structure of Gallium Arsenide Crystals using Madelung Potential”, Advances in Quantum Chemistry, 54, (2008) pp.13-21.
47. 高梨敬一, 末岡浩治, 福谷征史郎, “チョクラルスキー法による単結晶Si引上炉における液面位置オンライン測定技術の開発”, 日本機械学会論文集（C編）,
73巻, (2007) pp.2976-2981.
48. 中西亮太, 末岡浩治, 芝世弐, 福谷征史郎, 日野実, 村上浩二, “ニッケル/鉄(100)界面と銅/鉄(100)界面の最安定構造と密着性に関する第一原理計算”, 日本金属学会誌, 71巻, (2007) pp.1024-1031.
49. K. Sueoka, S. Shiba and S. Fukutani, “First Principles Analysis of Formation
Energy of Point Defects and Voids in Silicon Crystals during the Cooling
Process of Czochralski Method (Dopant Type and Concentration Dependence)”,
J. Solid Mechanics and Materials Engineering, 1, (2007) pp.1175-1185.
50. K. Sueoka, S. Shiba and S. Fukutani, “First Principles Calculation of
the Mechanism of Oxygen Precipitation in Czochralski Silicon Crystals (Effects
of Heavy Boron Doping)”, J. Solid Mechanics and Materials Engineering, 1, (2007) pp.1165-1174.
51. 王艶波, 末岡浩治, 芝世弐, 福谷征史郎, “平面応力を負荷した半導体シリコン単結晶中の点欠陥の安定性に関する第一原理解析”, 日本機械学会論文集（A編）, 73巻, (2007) pp.965-971.
52. 村上浩二, 平松実, 日野実, 末岡浩治, 中西亮太, “めっき皮膜の密着強度評価への新たな試み”, 表面技術, 58巻, (2007) pp.22-28.
53. 高梨敬一, 末岡浩治, 福谷征史郎, “チョクラルスキー法による単結晶Si引上炉における単結晶断面形状のオンライン測定技術の開発”,
日本機械学会論文集（C編）, 73巻, (2007) pp.649-654.
54. J. Vanhellemont, P. Śpiewak and K. Sueoka, “On the Stability and Diffusivity of the Intrinsic Point Defects in Germanium” J. Appl. Phys., 101, (2007) pp.036103-036105.
55. K. Sueoka and J. Vanhellemont, “Ab Initio Studies of Intrinsic Point
Defects, Interstitial Oxygen and Vacancy or Oxygen Clustering in Germanium
Crystals”, Materials Science in Semiconductor Processing, 9, (2006) pp.494-497.
56. 王艶波, 末岡浩治, 芝世弐, 福谷征史郎, “[110]圧縮応力を負荷したSi単結晶中のC-H複合体の安定性に関する第一原理解析”, 日本機械学会論文集（A編）, 72巻, (2006) pp.1200-1206.
57. 末岡浩治, 芝世弐, 福谷征史郎, “チョクラルスキー法によるSi単結晶育成中の点欠陥と空洞欠陥の形成エネルギーに関する第一原理解析（ドーパント型および濃度依存性）”,
日本機械学会論文集（A編）, 72巻, (2006) pp.801-808.
58. 末岡浩治, 芝世弐, 福谷征史郎, “Si単結晶におけるSi酸化物の析出機構に関する第一原理解析（高濃度B添加の効果）”, 日本機械学会論文集（A編）, 72巻, (2006) pp.369-376.
59. K. Sueoka, “Modeling of Internal Gettering of Nickel and Copper by Oxide
Precipitates in Czochralski-Si Wafers”, J. Electrochem. Soc., 152, (2005) pp.G731-735.
60. 末岡浩治, 大原茂大, 福谷征史郎, “第一原理計算によるSi結晶中のCu不純物原子とドーパント原子の相互作用解析”, 日本機械学会論文集（A編）, 71巻, (2005) pp.1103-1108.
61. A. Karoui, F.S. Karoui, G.A. Rozgonyi, M. Hourai and K.Sueoka, “Structure,
Energetics, and Thermal Stability of Nitrogen-Vacancy Related Defects in
Nitrogen Doped Silicon”, J. Electrochem. Soc., 150, (2003) pp.G771-777.
62. M. Akatsuka, M. Okui, S. Umeno and K. Sueoka, “Calculation of Size Distribution of Void Defect in Czochralski Silicon”, J. Electrochem. Soc., 150, (2003) pp.G587-590.
63. K. Sueoka, M. Akatsuka, M. Okui and H. Katahama, “Computer Simulation
for Morphology, Size and Density of Oxide Precipitates in Czochralski Silicon”,
J. Electrochem. Soc., 150, (2003) pp.G469-475.
|
